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Transmissive Photosensors (Photo lnterrupters)
CNZ1111 (ON1111), CNZ1112 (ON1112)
Photo lnterrupters
CNZ1111
Unit: mm
For contactless SW, object detection
0.45?0.1
Overview
Mark for indicating
LED side
CNZ1111 and CNZ1112 are a photocoupler in which a high
25.0?0.35
efficiency GaAs infrared light emitting diode is used as the light
13.0?0.3
5.0?0.2
0.45?0.1
emitting element, and a high sensitivity phototransistor is used as the
A
light detecting element. The two elements are arranged so as to face
Device
center
each other, and objects passing between them are detected.
A'
2-0.45?0.2
(10.0)
(2.54)
SEC. A-A'
Features
4
19.0?0.2
1
2-φ3.2?0.2
? Highly precise position detection : 0.3 mm
1: Cathode
? Wide gap between emitting and detecting elements, suitable for
2: Anode
2
3
3: Emitter
thick plate detection
4: Collector
? Fast response : tr , tf = 6 ?s (typ.)
PISTR104-010 Package
? Small output current variation against change in temperature
CNZ1112
Unit: mm
Absolute Maximum Ratings Ta = 25?C
0.45?0.1
Parameter
Symbol
Rating
Unit
Input (Light
Reverse voltage
VR
3
V
Mark for indicating
LED side
emitting diode) Forward current
IF
50
mA
13.0?0.3
*1
Power dissipation
PD
75
mW
5.0?0.2
0.45?0.1
A
Output (Photo Collector-emitter voltage
VCEO
30
V
2-R0.5
Device
center
transistor)
(Base open)
A'
2-0.45?0.2
Emitter-collector voltage
VECO
5
V
(10.0)
(2.54)
(Base open)
SEC. A-A'
4
1
Collector current
IC
20
mA
1: Cathode
Collector power dissipation *2
PC
100
mW
2: Anode
3
2
3: Emitter
-25 to +85
?C
Temperature
Operating ambient temperature
Topr
4: Collector
-30 to +100
?C
Storage temperature
Tstg
PISTR104-013 Package
Note) *1: Input power derating ratio is 1.0 mW/?C at Ta 25?C.
*2: Output power derating ratio is 1.34 mW/?C at Ta 25?C.
Note) The part numbers in the parenthesis show conventional part number.
1
Publication date: April 2004
SHG00031BED
CNZ1111, CNZ1112
Electrical-Optical Characteristics Ta = 25?C ? 3?C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
IF = 50 mA
Input
Forward voltage
VF
1.2
1.5
V
VR = 3 V
?A
characteristics Reverse current
IR
10
VCE = 10 V
ICEO
200
nA
Output
Collector-emitter cutoff current
characteristics (Base open)
VCE = 10 V, f = 1 MHz
5
pF
Collector-emitter capacitance
CC
VCE = 10 V, IF = 20 mA
Transfer
Collector current
IC
0.3
mA
IF = 50 mA, IC = 0.1 mA
characteristics Collector-emitter saturation voltage VCE(sat)
0.3
V
VCC = 10 V, IC = 1 mA, RL = 100
?s
Rise time *
tr
6.0
?s
Fall time *
tf
6.0
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
VCC
Sig. in
td: Delay time
(Input pulse)
tr: Rise time
90%
tf: Fall time
10%
(Output pulse)
Sig. out
td
RL
50
tr
tf
IF , IC Ta
IF VF
IC IF
60
10
60
VCE = 10 V
Ta = 25?C
Ta = 25?C
IF
50
50
1
40
40
10 -1
30
30
IC
20
20
10 -2
10
10
10 -3
0
0
-25
10-1
102
1
10
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (?C)
Forward voltage VF (V)
Forward current IF (mA)
2
SHG00031BED
CNZ1111, CNZ1112
VF Ta
IC VCE
IC Ta
102
1.6
160
VCE = 10 V
Ta = 25?C
IF = 20 mA
IF = 50 mA
10
1.2
120
IF = 30 mA
10 mA
20 mA
1
0.8
80
10 mA
10  -1
0.4
40
10  -2
0
0
-40
-40
10  -1
102
0
40
80
0
40
80
1
10
Ambient temperature Ta (?C)
Ambient temperature Ta (?C)
Collector-emitter voltage VCE (V)
ICEO Ta
tr IC
IC d
103
10
100
VCC = 10 V
VCE = 10 V
Ta = 25?C
Ta = 25?C
IF = 20 mA
1
80
Criterion
102
0
d
VCE = 24 V
10 V
RL = 1 k
10  -1
60
500
10
10  -2
40
100
VCC
Sig. in
1
Sig. V1
10  -3
20
90%
out
V2  V2
V1
10%
td
50
RL
tr
tf
10  -4
10  -1
0
-40
10  -2
10  -1
0
40
80
1
10
0
1
2
3
4
5
6
Ambient temperature Ta (?C)
Collector current IC (mA)
Distance d (mm)
3
SHG00031BED
Caution for Safety
This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
DANGER
ingested. Do not burn, destroy, cut, cleave off, or chemically dis-
solve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
? Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
? Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP